MMBD101LT1 Datasheet, PDF (2/2 Pages) Leshan Radio Company – Schottky Barrier Diodes

LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
(T _A = 25°C unless noted)
M M B D 1 0 1 LT 1
1.0
0.7
0.5
V _R= 3.0Vdc
0.2
0.1
0.07
0.05
0.02
0.01
30 40
50 60 70 80
90 100 110 120 130
T _A , AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
1.0
0.9
0.8
0.7
0.6
0
1.0
2.0
3.0
4.0
V _R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
100
T _A = 85°C
10
T _A = –40°C
10
T _A = 25°C
0.1
0.3
0.4
0.5
0.6
0.7
V _F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.1
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
0.2
0.5
1.0
2.0
5.0
10
P _LO , LOCAL OSCILLATOR POWER (mW)
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — C _C and C _T are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local
oscillator (LO) frequency of 1.0 GHz. The LO power
is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB,
f = 30 MHz, see Figure 5.
Note 3 — L _S is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
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