MMBD101LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Schottky Barrier Diodes

LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use
in detector and ultra-fast switching circuits.Supplied in an inexpensive
plastic package for low-cost,high-volume consumer requirements.Also
available in Surface Mount package.
• Low Noise Figure—6.0dB Typ@1.0GHz
• Very Low Capacitance—Less Than 1.0pF@zero Volts
• High Forward Conductance—0.5volts(typ)@I_F=10mA
MMBD101LT1
SILICON SCHOTTKY
BARRIER DIODES
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
MBD101 MMBD101LT1
Rating
symbol
value
unit
Reverse Voltage
vR
Forward Power Dissipation
pF
@TA=25 °C
7.0
280
225
Volts
mW
Derate above 25 °C
2.2
1.8
mW/ °C
Junction Temperature
TJ
Storage Temperature Range
Tstg
DEVICE MARKING
+150
°C
–55 to +150
°C
MMBD101LT1=4M
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(IR= 10µAdc)
V(BR)R
7.0
10
Diode Capacitance
(VR= 0,f =1.0MHz,Note1)
Forward Voltage(1)
(I F= 10mAdc)
CT
—
0.88
VF
—
0.5
Reverse Leakage
IR
—
0.02
(VR= 3.0Vdc)
Max
—
1.0
0.6
0.25
Unit
Volts
pF
Volts
µAdc
NOTE: MMBD101LT1 is also available in bulk packaging.Use MMBD101L as the device title to order this device in bulk.
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