LP2305LT1G_15 Datasheet, PDF (2/4 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static ²⁾
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
BV_DSS
R_DS(on)
R_DS(on)
R_DS(on)
V_GS(th)
V_GS = 0V, I_D = -250uA
V_GS = -10V, I_D = -4.2A
V_GS = -4.5V, I_D = -4A
V_GS = -2.5V, I_D =-1A
V_DS =V_GS, I_D = -250uA
Zero Gate Voltage Drain Current
I_DSS V_DS = -24V, V_GS = 0V
Gate Body Leakage
I_GSS V_GS = ± 12V, V_DS = 0V
Forward Transconductance
Dynamic³⁾
g_fs V_DS = -5V, I_D = -5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
V_DS = -15V, I_D = -4A
V_GS = -4.5V
Q_gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = -15V, RL= 3.6Ω
I_D = -1A, V_GEN = -10V
R_G = 6Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
V_DS = -15V, V_GS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
I_S
Diode Forward Voltage
V_SD I_S = -1.0A, V_GS = 0V
Note: 1. Pulse test: pulse width <= 300us, duty cycle<= 2%
2. Static parameters are based on package level with recommended wire-bonding
3. Guaranteed by design; not subject to production testing
Min Typ Max Unit
-30
V
53.0
70.0
64.0
85.0
mΩ
86.0 130.0
-0.7
-1.3
V
-1
uA
± 100
nA
7
11
S
6.36
1.79
nC
1.42
11.36
2.32
ns
34.88
3.52
826.18
90.74
pF
53.18
-2.2
A
-1
V
Rev .O 2/4