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| LP2305LT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – 30V P-Channel Enhancement-Mode MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-4.2A = 70mâ¦
RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mâ¦
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mâ¦
FEATURES
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LP2305LT1G
S-LP2305LT1G
LP2305LT3G
S-LP2305LT3G
Marking
P05
P05
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP2305LT1G
S-LP2305LT1G
3
1
2
SOTâ 23 (TOâ236AB)
3D
G
1
S
2
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±12
Continuous Drain Current
ID
-4.2
Pulsed Drain Current 1)
IDM
-30
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Total Power Dissipation
PD
1.4
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
RθJA
140
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in 2oz Cu PCB board
Unit
V
A
oC
W
oC/W
Rev .O 1/4
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