English
Language : 

LP2305DSLT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – 8V P-Channel Enhancement-Mode MOSFET
◁
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
ELECTRICAL CHARACTERISTICS
Parameter
Static 1)
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
On-State Drain Current 2)
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Dynamic 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching 3)
Turn-On Time
Turn-Off Time
Symbol
Test Condition
Min
BVDSS VGS = 0V, ID = -250uA
RDS(on) VGS = -4.5V, ID = -3.5A
RDS(on) VGS = -2.5V, ID = -3A
RDS(on) VGS = -1.8V, ID = -2A
VGS(th) VDS =VGS, ID = -250uA
IDSS VDS = -6.4V, VGS = 0V
IGSS VGS = ± 8V, VDS = 0V
gfs VDS = -5V, ID = -3.5A
ID(on)
VDS v –5 V, VGS = –4.5 V
VDS v –5 V, VGS = –2.5 V
-8
-0.45
–6
–3
IS
VSD IS = -1.6A, VGS = 0V
Ciss
Coss
Crss
VVDS = –4 V, VGS = 0, f = 1MMHHZ
td(on)
tr
td(off)
tf
VDD = –4 V, RL = 4 W
ID = –1.0 A, VGEN = –4.5 V
RG = 6 W
Note: 1. Static parameters are based on package level with recommended wire-bonding
2.For DESIGN AID ONLY, not subject to production testing.
3.Pulse test: PW v300 ms duty cycle v2%.
Typ
47.0
55.0
67.0
8.5
–1.6
1245
375
210
13
25
55
19
Max
68.0
81.0
118.0
-0.8
1
±100
-1.2
20
40
80
35
Unit
V
mΩ
V
uA
nA
S
A
A
V
pF
ns
Rev .O 2/5
 ▷