LP2305DSLT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 8V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V
RDS(ON), Vgs@-4.5V, Ids@"3.5A = 68 mΩ
RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ
RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements .
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
LP2305DSLT1G
S-LP2305DSLT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
Ordering Information
Device
LP2305DSLT1G
S-LP2305DSLT1G
LP2305DSLT3G
S-LP2305DSLT3G
Marking
P5S
P5S
Shipping
3000/Tape&Reel
10000/Tape&Reel
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
-8
Gate-Source Voltage
V_GS
±8
Continuous Drain Current
Pulsed Drain Current ¹⁾
I_D
-3.5
I_DM
-12
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Total Device Dissipation FR–5 Board T_A = 25°C
P_D
1100
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
Unit
V
A
o_C
mW
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Value
110
Unit
℃/W
Rev .O 1/5