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LN2302LT1G_11 Datasheet, PDF (2/5 Pages) Leshan Radio Company – 20V N-Channel Enhancement-Mode MOSFET
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ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic 3)
Total Gate Charge
Symbol
BVDSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Rg
gfs
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
IS
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
LESHAN RADIO COMPANY, LTD.
LN2302LT1G
Test Condition
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 2.8A
VGS = 2.5V, ID = 2.0A
VDS =VGS, ID = 250uA
VDS = 9.6V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = 5V, ID = 4.0A
VDS = 6V, ID = 2.8A
VGS = 4.5V
VDD = 6V, RL = 6Ω
ΙD = 1Α, VGEN = 4.5V
RG = 6Ω
VDS = 6V, VGS = 0V
f = 1.0 MHz
IS = -1.6A, VGS = 0V
Min
Typ
Max Unit
20
-
-
V
40
60
mΩ
50
115
0.60
0.95
1.20
V
-1
uA
±100 nA
Ω
6.5
S
3.69
0.70
nC
1.06
6.16
7.56
ns
16.61
4.07
427.12
80.56
pF
57.00
1.6
A
1.2
V
Rev .A 2/5
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