LN2302LT1G_11 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 20V N-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@2.8A = 60m ^Ω
RDS(ON), Vgs@2.5V, Ids@2.0A = 115m^Ω
Features
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements.
LN2302LT1G
3
1
2
SOT– 23 (TO–236AB)
3D
▼ H igh Density Cell Design For U ltra Low On - Resistance
G
1
Improved Shoot-Through FOM
S
2
Ordering Information
Device
Marking
LN2302LT1G
N02
Shipping
3000/Tape & Reel
LN2302LT3G
N02
10,000/Tape & Reel
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
I_DM
Maximum Power Dissipation
TA = 25^oC
P_D
TA = 75^oC
Operating Junction and Storage Temperature Range
T_J, T_stg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
R_qJC
R_qJA
Limit
20
±8
2.3
8
0.9
0.57
-55 to 150
145
Unit
V
A
W
o_C
o_C/W
Rev .A 1/5