LMBTA56WT1G Datasheet, PDF (2/3 Pages) Leshan Radio Company – Driver Transistors PNP Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
LMBTA55WT1G LMBTA56WT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –100mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage
(I C = –100mAdc, V CE = –1.0Vdc)
hFE
VCE(sat)
V BE(on)
100
100
—
—
Max
—
—
–0.25
–1.2
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4)
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
f_T
50
—
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
LMBTA55WT1G
LMBTA56WT1G
LMBTA55WT3G
LMBTA56WT3G
2H
2GM
2H
2GM
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Unit
—
Vdc
Vdc
MHz
TURN−ON TIME
−1.0 V
V_CC
+40 V
TURN−OFF TIME _+VBB
V_CC
+40 V
5.0 ms
+10 V
0
t_r = 3.0 ns
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
5.0 ms
t_r = 3.0 ns
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
Rev.O 2/3