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LMBTA56WT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – Driver Transistors PNP Silicon RoHS requirements. | |||
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LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
LMBTA55WT1G
LMBTA56WT1G
3
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
V CEO
CollectorâBase Voltage
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
Value
LMBTA55 LMBTA56
â60 â80
â60 â80
â4.0
â500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
150
mW
1.2
mW/°C
833
°C/W
200
mW
1.6
625
â55 to +150
mW/°C
°C/W
°C
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBTA55WT1G = 2H; LMBTA56 WT1G = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (3)
(I C = â1.0 mAdc, I B= 0 )
LMBTA55
LMBTA56
EmitterâBase Breakdown Voltage
(I E = â100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = â60Vdc, I B = 0)
Collector Cutoff Current
( V CB = â60Vdc, I E= 0)
LMBTA55
( V CB = â80Vdc, I E= 0)
LMBTA56
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V (BR)CEO
V (BR)EBO
I CES
I CBO
Min
â60
â80
â4.0
â
â
â
Max
Unit
â
â
â
â0.1
â0.1
â0.1
Vdc
Vdc
µAdc
µAdc
Rev.O 1/3
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