LMBT6517LT1G_15 Datasheet, PDF (2/6 Pages) Leshan Radio Company – High Voltage Transistors

LESHAN RADIO COMPANY, LTD.
LMBT6517LT1G , S-LMBT6517LT1G
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
hFE
(I C = 1.0 mAdc, V CE = 10 Vdc)
20
(I _C = 10mAdc, V _CE = 10 Vdc)
30
(I C = 30 mAdc, V CE = 10 Vdc)
30
(I _C = 50 mAdc, V _CE = 10 Vdc)
20
(I C = 100 mAdc, V CE = 10 Vdc)
15
Collector–Emitter Saturation Voltage(3) V_CE(sat)
(I C = 10mAdc, I B = 1.0mAdc)
—
(I C = 20 mAdc, I B = 2.0 mAdc)
—
(I C = 30 mAdc, I B = 3.0mAdc)
—
(I C = 50 mAdc, I B = 5.0 mAdc)
—
Base – Emitter Saturation Voltage
VBE(sat)
(I C = 10mAdc, I B = 1.0mAdc,)
—
(I C = 20mAdc, I B = 2.0mAdc,)
—
(I C = 30mAdc, I B = 3.0mAdc,)
—
Base–Emitter On Voltage
(I C = 100mAdc, V CE = 10Vdc)
V BE(on)
—
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz) ^{f T}
40
Collector –Base Capacitance
(V CB = 20 Vdc, f = 1.0 MHz)
C cb
—
Emitter –Base Capacitance
C eb
—
(V EB=0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Max
—
—
200
200
—
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
200
6.0
80
Unit
—
Vdc
Vdc
Vdc
MHz
pF
pF
Rev.O 2/6