LMBT6517LT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – High Voltage Transistors

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
We declare that the material of product
compliance with RoHS requirements.
Ordering Information
Device
LMBT6 517LT1G
S-LMBT6 517LT1G
LMBT6517LT3G
S-LMBT6517LT3G
Marking
1Z
1Z
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT6517LT1G
S-LMBT6517LT1G
3
1
2
MAXIMUM RATINGS
SOT–23
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Base Current
I_B
Collector Current — Continuous I _C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
(S-)LMBT6517LT1 G= 1Z
Value
350
350
5.0
250
500
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
BASE
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 1.0 mAdc )
Collector–Base Breakdown Voltage
(I _C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc )
Collector Cutoff Current
( V _CB = 250Vdc )
Emitter Cutoff Current
( V _EB = 5.0Vdc )
V _(BR)CEO
V _(BR)CBO
V _(BR)EBO
I _CBO
I _EBO
350
350
6.0
—
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
50
nAdc
Rev.O 1/6