LMBT6427LT1G_15 Datasheet, PDF (2/6 Pages) Leshan Radio Company – Darlington Transistors

LESHAN RADIO COMPANY, LTD.
LMBT6427LT1G , S-LMBT6427LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
hFE
(I C = 10 mAdc, V CE = 5.0 Vdc)
(I C = 100 mAdc, V CE = 5.0Vdc)
(I C = 500 mAdc, V CE = 5.0Vdc)
Collector–Emitter Saturation Voltage
(I C = 50 mAdc, I B = 0.5 mAdc)
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter Saturation Voltage
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter On Voltage
(I C = 50 mAdc, V CE = 5.0Vdc)
VCE(sat)(3)
V BE(sat)
V BE(on)
10,000
20,000
14,000
––
––
––
—
Max
100,000
200,000
140,000
1.2
1.5
2.0
1.75
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
C obo
Input Capacitance
(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)
C ibo
Current Gain–High Frequency
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
|h _fe |
Noise Finure
NF
(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz )
3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0%
––
7.0
––
15
1.3
—
—
10
Unit
––
Vdc
Vdc
Vdc
pF
pF
Vdc
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/6