LMBT6427LT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – Darlington Transistors

LESHAN RADIO COMPANY, LTD.
Darlington Transistors
NPN Silicon
z W. e declare that the material of product
compliance with RoHS requirements.
z .S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LMBT6427LT1G
S-LMBT6427LT1G
LMBT6427LT3G
S-LMBT6427LT3G
MAXIMUM RATINGS
Marking
1V
1V
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT6427LT1G
S-LMBT6427LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
THERMAL CHARACTERISTICS
Value
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
(S-)LMBT6427LT1G = 1V
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I _C = 10 mAdc, V _BE = 0)
Collector–Base Breakdown Voltage
(I _C = 100 µAdc, I _E = 0)
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc, I _C = 0)
V _(BR)CEO
40
—
V _(BR)CBO
40
—
V _(BR)EBO
12
—
Collector Cutoff Current
( V _CE = 25Vdc, I _B = 0)
Collector Cutoff Current
( V _CB = 30Vdc, I _E = 0)
Emitter Cutoff Current
( V _EB = 10Vdc, I _C= 0)
I _CES
I _CBO
I _EBO
—
1.0
—
50
—
50
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
BASE
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
nAdc
3
COLLECTOR
2
EMITTER
Rev.O 1/6