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L2N7002LT1G_11 Datasheet, PDF (2/4 Pages) Leshan Radio Company – Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23
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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
ON CHARACTERISTICS (Note 2.)
TJ = 25°C
TJ = 125°C
V(BR)DSS
60
IDSS
–
–
IGSSF
–
IGSSR
–
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
VGS(th)
1.0
ID(on)
500
VDS(on)
–
–
rDS(on)
–
–
–
–
gFS
80
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Ciss
–
Coss
–
Crss
–
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
td(on)
–
td(off)
–
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
VSD
–
IS
–
Source Current Pulsed
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
ISM
–
L2N7002LT1G
Typ
Max Unit
–
–
Vdc
–
1.0
µAdc
–
500
–
1
µAdc
–
-1
µAdc
1.6
2
Vdc
–
–
mA
Vdc
–
3.75
–
0.375
Ohms
1.4
7.5
–
13.5
1.8
7.5
–
13.5
–
–
mmhos
17
50
pF
10
25
pF
2.5
5.0
pF
7
20
ns
11
40
ns
–
–1.5
Vdc
–
–115 mAdc
–
–800 mAdc
Rev .O 2/4
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