L2N7002LT1G_11 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
• We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
• ESD Protected:1000V
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R_GS = 1.0 MΩ)
Drain Current
– Continuous T_C = 25°C (Note 1.)
– Continuous T_C = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
V_DSS
V_DGR
I_D
I_D
I_DM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
V_GS
V_GSM
±20
Vdc
±40
Vpk
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
R_θJA
P_D
R_θJA
T_J, T_stg
556
300
2.4
417
-55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
L2N7002LT1G
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
Simplified Schematic
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002LT1G
702
3000 Tape & Reel
L2N7002LT3G
702
10000 Tape & Reel
1
Gate
702
W
2
Source
= Device Code
=Month Code
Rev .O 1/4