SP3130 Datasheet, PDF (2/5 Pages) Littelfuse – TVS Diode Arrays (SPA ® Diodes)

TVS Diode Arrays (SPA^®®Diodes)
Low Capacitance ESD Protection - SP3130 Series
Absolute Maximum Ratings
Thermal Information
Symbol
Parameter
Value
Units
I_PP
Peak Current (t_p=8/20μs)
2.0
A
T_OP
Operating Temperature
-40 to 125
°C
T_STOR
Storage Temperature
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Parameter
Storage Temperature Range
Maximum Lead Temperature
(Soldering 20-40s)
Electrical Characteristics (T_OP=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Reverse Standoff Voltage
V_RWM
Reverse Leakage Current
I_LEAK
V_R=28V with 1pin at GND
10
Clamp Voltage¹
V_C
I_PP=1A, t_p=8/20µs, Fwd
I_PP=2A, t_p=8/20µs, Fwd
39
42
ESD Withstand Voltage¹
IEC61000-4-2 (Contact)
±10
V_ESD
IEC61000-4-2 (Air)
±15
Dynamic Resistance²
R_DYN
TLP, t_P=100ns, I/O to GND
1.0
Diode Capacitance¹
C_I/O-I/O
Reverse Bias=0V, f=1 MHz
0.3
Note: 1. Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
8/20μS Pulse Waveform
Capacitance vs. Reverse Bias
Rating
-55 to 150
260
Units
°C
°C
Max
Units
28
V
50
nA
44
V
48
V
kV
kV
Ω
0.45
pF
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
0.5
0.4
0.3
0.2
0.1
0
0
4
8
12 16 20 24 28
Bias Voltage (V)
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 08/04/16