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SP3012-04UTG Datasheet, PDF (2/6 Pages) Littelfuse – Low Capacitance ESD Protection - SP3012 Series
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP3012 Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
IPP
Peak Current (tp=8/20μs)
4.0
A
TOP
Operating Temperature
–40 to 125
°C
TSTOR
Storage Temperature
–55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Reverse Standoff Voltage
Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance
ESD Withstand Voltage1
VRWM
ILEAK
VC
RDYN
VESD
IR ≤ 1µA
VR=5V, Any I/O to GND
IPP=1A, tp=8/20µs, Fwd
IPP=2A, tp=8/20µs, Fwd
(VC2 - VC1) / (IPP2 - IPP1)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
5.0
1.5
6.6
7.0
0.4
±12
±25
Diode Capacitance1
CI/O-GND
Reverse Bias=0V, f=1 MHz
0.5
Diode Capacitance1
CI/O-/O
Reverse Bias=0V, f=1 MHz
0.3
Note: 1 Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Bias Voltage
1.0
Insertion Loss (S21) I/O to GND
0
-3
-6
0.8
-9
-12
0.6
-15
-18
0.4
-21
-24
0.2
-27
0.0


2.0
3.0
4.0
5.0
Bias Voltage (V)
-30
100
Frequency (MHz) 1000
Units
V
µA
V
V
Ω
kV
kV
pF
pF
Clamping Voltage vs. IPP
10.0
8.0
6.0
4.0
2.0
0.0 1
2
3
4
Current (A)
Transmission Line Pulsing(TLP) Plot
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1 2 3 4 5 6 7 8 9 10 11
TLP Voltage (V)
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13