SLVU2.8 Datasheet, PDF (2/4 Pages) Semtech Corporation – Low Voltage EPD TVS Diode For ESD and Latch-Up Protection

TVS Diode Arrays (SPA^™Family of Products)
Lightning Surge Protection - SLVU2.8 Series
Electrical Characteristics (T_OP = 25°C)
Parameter
Symbol
Test Conditions
Min
Reverse Standoff Voltage
V_RWM
I_R≤1μA
Reverse Breakdown Voltage
V_BR
I_T=2μA
3.0
Snap Back Voltage
V_SB
I_T=50mA
2.8
Reverse Leakage Current
Clamping Voltage¹
Clamping Voltage¹
Clamping Voltage¹
Clamping Voltage¹
I_LEAK
V_R=2.8V (Pin 2 or 3 to 1)
I_PP=5A, t_P=8/20μs (Pin 3 to 1)
V_C
I_PP=24A, t_P=8/20μs (Pin 3 to 1)
I_PP=5A, t_P=8/20μs (Pin 2 to 1)
I_PP=24A, t_P=8/20μs (Pin 2 to 1)
Dynamic Resistance
R_DYN
(V_C2 - V_C1) / (I_PP2 - I_PP1) (Pin 2 to 1)
ESD Withstand Voltage¹
IEC61000-4-2 (Contact)
±30
V_ESD
IEC61000-4-2 (Air)
±30
Diode Capacitance¹
C_D
V_R=0V, f=1MHz (Pin 2 to 1)
Note: ¹Parameter is guaranteed by design and/or device characterization.
Typ
Max
Units
2.8
V
V
V
1
μA
5.7
7.0
V
8.3
12.5
V
7.0
8.5
V
13.9
15.0
V
0.4
Ω
kV
kV
2.0
2.5
pF
Absolute Maximum Ratings
Parameter
Peak Pulse Power (t_P=8/20µs)
Peak Pulse Current (t_P=8/20µs)
Operating Temperature
Rating
600
40
-40 to 85
Units
W
A
ºC
Storage Temperature
-60 to 150
ºC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Figure 1: Capacitance vs. Reverse Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
DC Bias (V)
Figure 2: Clamping Voltage vs. I_PP
Figure 3: Pulse Waveform
14
12
10
8
6
4
2
0
0
5
10
15
20
25
Peak Pulse Current-I_PP (A)
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0
15.0 20.0 25.0 30.0
Time (μs)
SLVU2.8 Series
2
Revision: February 15, 2012
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.