AQ1026 Datasheet, PDF (2/4 Pages) Littelfuse – AEC-Q101 qualified

TVS Diode Arrays (SPA^®®Diodes)
General Purpose ESD Protection - SAPQ11002266SSeerriieess
Absolute Maximum Ratings
Symbol
I_PP
T_OP
T_STOR
Parameter
Peak Pulse Current (t_p=8/20μs)
Operating Temperature
Storage Temperature
Value
5
-40 to 125
-55 to 150
Units
A
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature (Soldering 30s)
Rating
-55 to 150
150
260
Units
°C
°C
°C
Electrical Characteristics (T_OP=25ºC)
Parameter
Symbol
Test Conditions
Min
Reverse Standoff Voltage
V_RWM
Breakdown Voltage
V_BR
I_R=1mA (Pin 1 to 2)
Leakage Current
I_LEAK
V_R=5V
Clamp Voltage¹
V_C
I_pp=1A, t_p=8/20µs (Pin 1 to 2)
I_pp=2A, t_p=8/20µs (Pin 1 to 2)
Dynamic Resistance
R_DYN
(V_C2 - V_C1) / (I_PP2 - I_PP1)
IEC61000-4-2 (Contact Discharge)
±30
ESD Withstand Voltage¹
V_ESD
IEC61000-4-2 (Air Discharge)
±30
Diode Capacitance¹
C_D
Reverse Bias=0V
Reverse Bias=2.5V
Typ
7.8
0.1
12.0
13.4
1.4
15
12
Max
6.0
0.5
Note: ¹ Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Bias
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Bias Voltage (V)
Insertion Loss (S21) I/O to GND
0
-5
-10
-15
-20
-25
-30
10
100
1000
Frequency (MHz)
Units
V
V
μA
V
V
Ω
kV
kV
pF
pF
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 04/07/16
SP1007 Series