LT1113_15 Datasheet, PDF (7/16 Pages) Linear Technology – Dual Low Noise, Precision, JFET Input Op Amp

TYPICAL PERFOR A CE CHARACTERISTICS
LT1113
Voltage Gain vs Frequency
180
T_A = 25°C
V_S = ±15V
140
100
60
20
–20
0.01
1
100 10k 1M 100M
FREQUENCY (Hz)
1113 G10
Small-Signal Transient Response
Voltage Gain vs
Chip Temperature
10
9
V_S = ±15V
V_O = ±10V, R_L = 1k
8
V_O = ±12V, R_L = 10k
7
6
R_L =10k
5
4
3
R_L = 1k
2
1
0
–75 –50 –25 0 25 50 75 100 125
CHIP TEMPERATURE (°C)
1113 G11
Large-Signal Transient Response
Gain and Phase Shift vs
Frequency
50
60
T_A = 25°C
40
V_S = ±15V
C_L = 10pF
80
30
100
20
120
PHASE
10
140
GAIN
0
160
–10
0.1
1
10
FREQUENCY (MHz)
180
100
1113 G12
Supply Current vs Supply Voltage
6
25°C
–55°C
5
125°C
A_V = 1
C_L = 10pF
V_S = ±15V, ± 5V
1µs/DIV
1113 G13
Output Voltage Swing vs
Load Current
V⁺ – 0.8
–1.0
25°C
125°C
–1.2
–55°C
– 1.4
–1.6
V_S = ±5V TO ±20V
1.4
1.2
1.0
0.8
–55°C
0.6
V^– +0.4
125°C ^25°C
–10 –8 –6 –4 –2 0 2 4 6 8 10
I_{SINK OUTPUT CURRENT (mA)} I_SOURCE
1113 G16
A_V = 1
C_L = 10pF
V_S = ±15V
2µs/DIV
1113 G14
Capacitive Load Handling
50
V_S = ±15V
T_A = 25°C
40 R_L ≥ 10k
V_O = 100mV_P-P
A_V = +10, R_F = 10k, C_F = 20pF
30
20
10
0
0.1
A_V = 1
A_V = 10
1
10 100 1000 10000
CAPACITIVE LOAD (pF)
1113 G17
4
0
±5
±10
±15
±20
SUPPLY VOLTAGE (V)
1113 G15
Slew Rate and Gain Bandwidth
Product vs Temperature
6
12
5
10
4
SLEW RATE
8
3
6
GBW
2
4
1
2
0
0
–75 –50 –25 0 25 50 75 100 125
TEMPERATURE (°C)
1113 G18
1113fb
7