LT1113 Datasheet, PDF (5/16 Pages) Linear Technology – Dual Low Noise, Precision, JFET Input Op Amps

LT1113
ELECTRICAL CHARACTERISTICS
The q denotes specifications which apply over the temperature range – 55°C ≤ T_A ≤ 125°C. V_S = ±15V, V_CM = 0V,
unless otherwise noted. (Note 12)
SYMBOL PARAMETER
CONDITIONS (Note 4)
A_VOL Large-Signal Voltage Gain
V_O = ±12V, R_L = 10k
V_O = ±10V, R_L = 1k
V_OUT Output Voltage Swing
R_L = 10k
R_L = 1k
SR
Slew Rate
R_L ≥ 2k (Note 9)
GBW Gain Bandwidth Product
f_O = 100kHz
I_S
Supply Current Per Amplifier
V_S = ± 5V
∆V_OS
∆I_B+
Offset Voltage Match
Noninverting Bias Current Match
∆CMRR Common Mode Rejection Match (Note 11)
∆PSRR Power Supply Rejection Match (Note 11)
LT1113AM
MIN TYP MAX
q 800 2700
q 400 1500
q ±13.0 ±12.5
q ±11.5 ±12.0
q 1.9 3.3
q 2.2 3.4
q
5.30 6.35
q
5.25 6.30
q
1.0 5.0
q
1.8 12
q 75 92
q 76 91
LT1113M
MIN TYP MAX
700 2500
300 1000
±12.5 ±12.5
±11.0 ±12.0
1.6 3.3
2.2 3.4
5.30 6.55
5.25 6.50
1.0 5.5
2.0 20
73 92
74 91
UNITS
V/mV
V/mV
V
V
V/µs
MHz
mA
mA
mV
nA
dB
dB
Note 1: Absolute Maximum Ratings are those values beyond which the
life of the device may be impaired.
Note 2: The LT1113C is guaranteed functional over the Operating
Temperature Range of –40°C to 85°C. The LT1113M is guaranteed
functional over the Operating Temperature Range of – 55°C to 125°C.
Note 3: The LT1113C is guaranteed to meet specified performance from
0°C to 70°C. The LT1113C is designed, characterized and expected to
meet specified performance from –40°C to 85°C but is not tested or QA
sampled at these temperatures. For guaranteed I grade parts, consult the
factory. The LT1113M is guaranteed to meet specified performance from
–55°C to 125°C.
Note 4: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers, i.e., out of 100 LT1113s (200 op
amps) typically 120 op amps will be better than the indicated
specification.
Note 5: Warmed-up I_B and I_OS readings are extrapolated to a chip
temperature of 50°C from 25°C measurements and 50°C characterization
data.
Note 6: Current noise is calculated from the formula:
i_n = (2qI_B)^1/2
where q = 1.6 • 10 ^–19 coulomb. The noise of source resistors up to 200M
swamps the contribution of current noise.
Note 7: Input voltage range functionality is assured by testing offset
voltage at the input voltage range limits to a maximum of 2.3mV
(A grade) to 2.8mV (C grade).
Note 8: This parameter is not 100% tested.
Note 9: Slew rate is measured in A_V = –1; input signal is ±7.5V, output
measured at ±2.5V.
Note 10: The LT1113 is designed, characterized and expected to meet
these extended temperature limits, but is not tested at –40°C and 85°C.
Guaranteed I grade parts are available. Consult factory.
Note 11: ∆CMRR and ∆PSRR are defined as follows:
(1) CMRR and PSRR are measured in µV/V on the individual
amplifiers.
(2) The difference is calculated between the matching sides in µV/V.
(3) The result is converted to dB.
Note 12: The LT1113 is measured in an automated tester in less than
one second after application of power. Depending on the package used,
power dissipation, heat sinking, and air flow conditions, the fully
warmed-up chip temperature can be 10°C to 50°C higher than the
ambient temperature.
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