RH1011FD_15 Datasheet, PDF (3/4 Pages) Linear Technology – Voltage Comparator

RH1011
TABLE 1A: ELECTRICAL CHARACTERISTICS ^{(Postirradiation) (Note 10)}
SYMBOL PARAMETER
CONDITIONS
10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
Positive Supply Current
11
4.0
4.0
4.0
4.0
4.0 mA
Negative Supply Current
11
2.5
2.5
2.5
2.5
2.5 mA
Strobe Current
Minimum to Ensure Output 7,9,11 500
500
500
500
500
μA
Transistor is Turned Off
Input Capacitance
6 (Typ)
6 (Typ)
6 (Typ)
6 (Typ)
6 (Typ) pF
Note 1: Inputs may be clamped to supplies with diodes so that maximum
input voltage actually exceeds supply voltage by one diode drop. See Input
Protection discussion in the LT^®1011 data sheet.
Note 2: T_JMAX = 150°C.
Note 3: Output is sinking 1.5mA with V_OUT = 0V.
Note 4: These specifications apply for all supply voltages from a single 5V
to ±15V, the entire input voltage range and for both high and low output
states. The high state is I_SINK = 100μA, V_OUT = (V ⁺ – 1V) and the low state
is I_SINK = 8mA, V_OUT = 0.8V. Therefore, this specication defines a worst-
case error band that includes effects due to common mode signals,
voltage gain and output load.
Note 5: Drift is calculated by dividing the offset difference measured at
minimum and maximum temperatures by the temperature difference.
Note 6: Response time is measured with a 100mV step and 5mV
overdrive. The output load is a 500Ω resistor tied to 5V. Time
measurement is taken when the output crosses 1.4V.
Note 7: Do not short the STROBE pin to ground. It should be current
driven at 3mA to 5mA for the shortest strobe time. Currents as low as
500μA will strobe the RH1011 if speed is not important. External leakage
on the STROBE pin in excess of 0.2μA when the strobe is “off ” can cause
offset voltage shifts.
Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the
LT1011 data sheet.
Note 9: Guaranteed by design, characterization or correlation to other
tested parameters.
Note 10: V_S = ±15V, V_CM = 0V, R_S = 0Ω, T_A = 25°C, V_GND = V^–, output at
Pin 7, unless otherwise noted.
Note 11: V_GND = 0V.
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group B and D End Point Electrical Parameters
(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.
SUBGROUP
1*,2,3,4
1,2,3,4
1,2,3
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures (including Delta
parameters) of group A, subgroup 1, after burn-in divided by the total
number of devices submitted for burn-in in that lot shall be used to
determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
12V
5.1k
12Ω
5.1k
8
2₊
7
3_–
1
4
12Ω
–12V
RH1011 TDBC
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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