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RH1011FD_15 Datasheet, PDF (2/4 Pages) Linear Technology – Voltage Comparator
RH1011
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 10)
SYMBOL PARAMETER
VOS
Input Offset Voltage
IOS
Input Offset Current
IB
Input Bias Current
CONDITIONS
RS ≤ 50kΩ
ΔVOS
ΔT
AVOL
CMRR
td
VOL
Input Offset Voltage Drift TMIN ≤ T ≤ TMAX
Large Signal Voltage Gain
Common Mode Rejection
Ratio
VS = ±15V, RL = 1kΩ,
– 10V ≤ VOUT ≤ 14.5V
VS = 5V, RL = 500Ω,
0.5V ≤ VOUT ≤ 4.5V
Input Voltage Range
Response Time
VS = ±15V
VS = Single 5V
Output Saturation Voltage
Output Leakage Current
Positive Supply Current
VIN = –5mV, ISINK = 8mA
ISINK = 50mA
VIN = 5mV, VGND = – 15V,
VOUT = 20V
Negative Supply Current
Strobe Current
Minimum to Ensure Output
Transistor is Turned Off
Input Capacitance
NOTES
3
4
3,4
3
4
5,9
TA = 25°C
MIN TYP MAX
1.5
2.0
4
50
65
200
50
90
8,9 – 14.5
13
8,9 0.5
3.0
6,9
250
11
0.4
1.5
10
11
4.0
11
2.5
7,9,11 500
6
SUB- – 55°C ≤ TA ≤ 125°C SUB-
GROUP MIN TYP MAX GROUP
1
3.0
2,3
1
3.0
2,3
1
20
2,3
1
80
2,3
1
80
2,3
25
4
4
1
– 14.5
13
0.5
3.0
1
0.5
2,3
1
1.5
2,3
1
500
2,3
1
1
UNITS
mV
mV
nA
nA
nA
μV/°C
V/mV
V/mV
dB
V
V
ns
V
V
nA
mA
mA
μA
pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10)
SYMBOL PARAMETER
VOS
Input Offset Voltage
IOS
Input Offset Current
IB
Input Bias Current
AVOL Large-Signal Voltage
Gain
CMRR Common Mode
Rejection Ratio
Input Voltage Range
VOL
Output Saturation
Voltage
Output Leakage
Current
CONDITIONS
RL = 1kΩ,
– 10V ≤ VOUT ≤ 14.5V
10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
1.5
1.5
1.5
2.5
4
mV
4
4
4
20
50
nA
50
100
150
200
300 nA
200
200
150
100
50
V/mV
90
90
90
90
86
dB
VS = ±15V
VS = Single 5V
8,9 – 14.5 13 – 14.5 13 – 14.5 13 – 14.5 13 – 14.5 13
V
0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0
V
VIN = –5mV, ISINK = 8mA
11
ISINK = 50mA
0.4
0.4
0.4
0.4
0.4
V
1.5
1.5
1.5
1.5
1.5
V
VIN = 5mV, VGND = – 15V
VOUT = 20V
10
10
100
100
100 nA
2