|
LTC3548-1 Datasheet, PDF (3/16 Pages) Linear Technology – Dual Synchronous, Fixed Output 2.25MHz Step-Down DC/DC Regulator | |||
|
◁ |
LTC3548-1
ELECTRICAL CHARACTERISTICS The l denotes the speciï¬cations which apply over the full operating
temperature range, otherwise speciï¬cations are at TA = 25°C. VIN = 3.6V, unless otherwise speciï¬ed. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
VIN
VOUT1
VOUT2
ÎVLINE REG
ÎVLOAD REG
IS
fOSC
ILIM
RDS(ON)
Operating Voltage Range
Output Voltage
Output Voltage
Reference Voltage Line Regulation
Output Voltage Load Regulation
Input DC Supply Current
Active Mode
Sleep Mode
Shutdown
Oscillator Frequency
Peak Switch Current Limit Channel 1
Peak Switch Current Limit Channel 2
Top Switch On-Resistance
Bottom Switch On-Resistance
0°C ⤠TA ⤠85°C (Note 3)
â40°C ⤠TA ⤠85°C (Note 3)
0°C ⤠TA ⤠85°C (Note 3)
â40°C ⤠TA ⤠85°C (Note 3)
VIN = 2.5V to 5.5V (Note 3)
(Note 3)
VOUT1 = 1.5V, VOUT2 = 1.3V
VOUT1 = 1.9V, VOUT2 = 1.65V
RUN = 0V, VIN = 5.5V
VOUT1 = 1.8V, VOUT2 = 1.575V
VIN = 3V, Duty Cycle <35%
VIN = 3V, Duty Cycle <35%
(Note 6)
(Note 6)
â 2.5
5.5
V
1.764 1.8 1.836
V
â 1.755 1.8 1.836
V
1.544 1.575 1.607
V
â 1.536 1.575 1.607
V
0.3 0.5
%/V
0.5
%
700 950
μA
40 60
μA
0.1 1
μA
â 1.8 2.25 2.7
MHz
0.95 1.2 1.6
A
0.6
0.7 0.9
A
0.35 0.45
Ω
0.30 0.45
Ω
ISW(LKG)
VRUN
Switch Leakage Current
RUN Threshold
VIN = 5V, VRUN = 0V, VOUT1 = VOUT2 = 0
0.01 1
μA
â 0.3
1 1.5
V
IRUN
RUN Leakage Current
â
0.01 1
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3548-1 is guaranteed to meet speciï¬ed performance
from 0°C to 85°C. Speciï¬cations over the â 40°C and 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: The LTC3548-1 is tested in a proprietary test mode that connects
the output of the error ampliï¬er to an outside servo-loop.
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: TJ is calculated from the ambient TA and power dissipation PD
according to the following formula: TJ = TA + (PD ⢠θJA).
Note 6: The DFN switch on-resistance is guaranteed by correlation to
wafer level measurements.
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C unless otherwise speciï¬ed.
Burst Mode Operation
SW
5V/DIV
IL
200mA/DIV
VOUT1
20mV/DIV
VIN = 3.6V
2μs/DIV
VOUT1 = 1.8V
ILOAD = 60mA
CHANNEL 1; CIRCUIT OF FIGURE 3
Load Step
VOUT2
200mV/DIV
IL
200mA/DIV
ILOAD
40mA TO
400mA
200mA/DIV
3548-1 G01
VIN = 3.6V
20μs/DIV
VOUT2 = 1.575V
ILOAD = 40mA TO 400mA
CHANNEL 2; CIRCUIT OF FIGURE 3
Load Step
VOUT1
200mV/DIV
IL
500mA/DIV
ILOAD
80mA TO
800mA
500mA/DIV
3548-1 G03
VIN = 3.6V
20μs/DIV
VOUT1 = 1.8V
ILOAD = 80mA TO 800mA
CHANNEL 1; CIRCUIT OF FIGURE 3
3548-1 G02
35481fb
3
|
▷ |