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LTC3544_15 Datasheet, PDF (3/16 Pages) Linear Technology – Quad Synchronous Step-Down Regulator
LTC3544
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 3.6V unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNITS
IS
Input DC Bias Current Active Mode
(Four Regulators Enabled)
VFB = 0.7V, ILOAD = 0A, 2.25MHz
825 1100
μA
Sleep Mode
(Four Regulators Enabled)
VFB = 0.9V, ILOAD = 0A, 2.25MHz
70
80
μA
Shutdown
0.1
2
μA
fOSC
Oscillator Frequency
VRUN(HIGH) RUNx Input High Voltage
VRUN(LOW) RUNx Input Low Voltage
ISWx
SWx Leakage
IRUNx
RUN Leakage Current
IVFBx
VFBx Leakage Current
tSS
Soft-Start Period
VUVLO
Undervoltage Lockout
Individual Regulator Characteristics
VIN = 3V
VIN = 2.5V to 5.5V
2.25
MHz
● 1.8
2.7
MHz
● 1.0
V
●
0.3
V
VRUN = 0V, VSW = 0V or 5.5V, VIN = 5.5V
VIN = 5.5V
●
±0.1
±1
μA
±0.1
±1
μA
80
nA
VFB = 7.5% to 92.5% Full Scale
650
875 1200
μs
●
1.9
2.25
V
Regulator SW300 – 300mA
IPK
Peak Switch Current Limit
IS300
Input DC Bias Current–Reg SW300 Only
Burst Mode Operation (Sleep)
VFB < VFBREG, Duty Cycle < 35%
VFB = 0.9V, ILOAD = 0A, 2.25MHz
400
600
800
mA
32
μA
RPFET
RDS(ON) of P-Channel FET (Note 7)
RNFET
RDS(ON) of N-Channel FET (Note 7)
Regulator SW200A – 200mA
ISW = 100mA
ISW = –100mA
0.55
Ω
0.50
Ω
IPK
Peak Switch Current Limit
VFB < VFBREG, Duty Cycle < 35%
IS200
Input DC Bias Current–Reg SW200A Only
VFB = 0.9V, ILOAD = 0A, 2.25MHz
Burst Mode Operation (Sleep)
300
400
500
mA
32
μA
RPFET
RDS(ON) of P-Channel FET (Note 7)
RNFET
RDS(ON) of N-Channel FET (Note 7)
Regulator SW200B – 200mA
ISW = 100mA
ISW = –100mA
0.65
Ω
0.60
Ω
IPK
Peak Switch Current Limit
VFB < VFBREG, Duty Cycle < 35%
IS200
Input DC Bias Current–Reg SW200B Only
VFB = 0.9V, ILOAD = 0A, 2.25MHz
Burst Mode Operation (Sleep)
300
400
500
mA
32
μA
RPFET
RDS(ON) of P-Channel FET (Note 7)
RNFET
RDS(ON) of N-Channel FET (Note 7)
Regulator SW100 – 100mA
ISW = 100mA
ISW = –100mA
0.65
Ω
0.60
Ω
IPK
Peak Switch Current Limit
VFB < VFBREG, Duty Cycle < 35%
IS100
Input DC Bias Current–Reg SW100B Only
VFB = 0.9V, ILOAD = 0A, 2.25MHz
Burst Mode Operation (Sleep)
200
300
400
mA
32
μA
RPFET
RNFET
RDS(ON) of P-Channel FET (Note 7)
RDS(ON) of N-Channel FET (Note 7)
ISW = 100mA
ISW = –100mA
0.80
Ω
0.75
Ω
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3544E is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
3544fa
3