LTC3419 Datasheet, PDF (3/16 Pages) Linear Technology – Dual Monolithic 600mA Synchronous Step-Down Regulator

LTC3419
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T_A = 25°C, V_IN = 3.6V, unless otherwise noted.
SYMBOL
ΔV_{LOAD REG}
I_S
f_OSC
I_LIM
R_DS(ON)
I_SW(LKG)
t_SOFTSTART
V_RUN
I_RUN
V_MODE
I_MODE
V_BURST
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
Output Voltage Load Regulation
Input DC Supply Current
Active Mode (Note 4)
Sleep Mode
Shutdown
Oscillator Frequency
Peak Switch Current Limit
Channel 1 (600mA)
Channel 2 (600mA)
I_LOAD = 0mA to 600mA (Note 7)
0.5
%
V_FB1 = V_FB2 = 0.95 × V_FBREG
V_FB1 = V_FB2 = 1.05 × V_FBREG, V_IN = 5.5V
RUN1 = RUN2 = 0V, V_IN = 5.5V
500
700
μA
35
60
μA
0.1
1
μA
V_FB = V_FBREG
● 1.8
2.25
2.7
MHz
V_IN = 3V, V_FB < V_FBREG, Duty Cycle < 35%
900 1200
mA
900 1200
mA
Channel 1 (Note 5)
Top Switch On-Resistance
Bottom Switch On-Resistance
Channel 2 (Note 5)
Top Switch On-Resistance
Bottom Switch On-Resistance
Switch Leakage Current
Soft-Start Time
RUN Threshold High
V_IN = 3.6V, I_SW = 100mA
V_IN = 3.6V, I_SW = 100mA
V_IN = 3.6V, I_SW = 100mA
V_IN = 3.6V, I_SW = 100mA
V_IN = 5V, V_RUN = 0V
V_FB from 10% to 90% Full Scale
0.4
0.6
Ω
0.4
0.6
Ω
0.4
0.6
Ω
0.4
0.6
Ω
0.01
1
μA
0.1
0.95
1.3
ms
● 0.4
1
1.2
V
RUN Leakage Current
●
0.01
1
μA
MODE Threshold High
● 0.4
1
1.2
V
MODE Leakage Current
●
0.01
1
μA
Output Ripple in Burst Mode Operation V_OUT = 1.5V, C_OUT = 10μF
20
mV_P-P
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Guaranteed by long term current density limitations.
Note 3: The LTC3419E and LTC3419E-1 are guaranteed to meet specified
performance from 0°C to 85°C. Specifications over the –40°C and 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: The DFN switch on-resistance is guaranteed by correlation to
wafer level measurements.
Note 6: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 7: The converter is tested in a proprietary test mode that connects
the output of the error amplifier to the SW pin, which is connected to an
external servo loop.
3419f
3