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RH1034-1.2 Datasheet, PDF (2/4 Pages) Linear Technology – Micropower Dual Reference
RH1034-1.2
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation)
SYMBOL PARAMETER
CONDITIONS
TA = 25°C
SUB- –55°C ≤ TA ≤ 125°C SUB-
NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP
UNITS
1.2V Reference
VZ
Reverse Breakdown Voltage IR = 100μA
ΔVZ
Reverse Breakdown Voltage 20μA ≤ IR ≤ 2mA
ΔIR
Change with Current
2mA ≤ IR ≤ 20mA
Minimum Operating Current
1.210
1.240 1 1.195
1.255 2, 3
V
2.0
1
8.0
1
4.0 2, 3
mV
15.0 2, 3
mV
20
1
30 2, 3
μA
Temperature Coefficient IR = 100μA
rz
Reverse Dynamic
Impedance
IR = 100μA
60
1
3
1.0
1
60 2, 3
2.0 2, 3
ppm/°C
Ω
Low Frequency Noise
IR = 100μA, 0.1Hz ≤ f ≤ 10Hz
4
Long-Term Stability
IR = 100μA
20
7V Reference
μVP-P
ppm/√kHrs
VZ
Reverse Breakdown Voltage IR = 100μA
ΔVZ
Reverse Breakdown Voltage 100μA ≤ IR ≤ 1mA
ΔIR
Change with Current
1mA ≤ IR ≤ 20mA
Temperature Coefficient IR = 100μA
Long-Term Stability
IR = 100μA
6.70
7.30 1 6.60
140 1
250 1
60
20
7.40 2, 3
V
190 2, 3
mV
350 2, 3
mV
ppm/°C
ppm/√kHrs
TABLE 2: ELECTRICAL CHARACTERISTICS (Postirradiation) TA = 25°C.
SYMBOL PARAMETER
1.2V Reference
VZ
Reverse Breakdown
Voltage
ΔVZ Reverse Breakdown
ΔIR
Voltage Change with
Current
rz
Reverse Dynamic
Impedance
7V Reference
VZ
Reverse Breakdown
Voltage
ΔVZ Reverse Breakdown
ΔIR
Voltage Change with
Current
CONDTIONS
IR = 100μA
20μA ≤ IR ≤ 2mA
2mA ≤ IR ≤ 20mA
IR = 100μA
IR = 100μA
100μA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
1.202 1.248 1.197 1.253 1.187 1.263 1.172 1.278 1.142 1.308
V
2.8
3.2
4.0
5.0
7.5 mV
8.8
9.7
11.2
14.5
22.5 mV
3
1.4
1.6
2.0
2.5
3.75
Ω
6.796 7.304 6.796 7.304 6.796 7.304 6.791 7.309 6.786 7.314
V
150
150
150
150
150 mV
275
275
275
275
275 mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Forward biasing either diode will affect the operation of the other
diode.
Note 3: This parameter guaranteed by “reverse breakdown voltage change
with current” test.
2