RH1016 Datasheet, PDF (2/2 Pages) Linear Technology – UltraFast™ Precision 10ns Comparator

DICE/DWF SPECIFICATION
RH1016
Rad Hard die require special handling as compared to standard IC chips.
Rad Hard die are susceptible to surface damage because there is no silicon
nitride passivation as on standard die. Silicon nitride protects the die
surface from scratches by its hard and dense properties. The passivation
on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride.
LTC recommends that die handling be performed with extreme care so
as to protect the die surface from scratches. If the need arises to move
the die around from the chip tray, use a Teflon-tipped vacuum wand. This
wand can be made by pushing a small diameter Teflon tubing onto the tip
of a steel-tipped wand. The inside diameter of the Teflon tip should match
the die size for efficient pickup. The tip of the Teflon should be cut square
and flat to ensure good vacuum to die surface. Ensure the Teflon tip
remains clean from debris by inspecting under stereoscope.
During die attach, care must be exercised to ensure no tweezers touch the
top of the die.
Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus
packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information
on dice performance and lot qualifications via lot sampling test procedures.
Dice data sheet subject to change. Please consult factory for current revision in production.
I.D.No. 66-13-1016
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