LSK489 Datasheet, PDF (2/6 Pages) Linear Integrated Systems – LOW NOISE LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
VGS1  VGS2 ^{Differential Gate to Source Cutoff}
Voltage
20
mV
ID SS1
Gate to Source Saturation Current Ratio 0.9
1.0
ID SS2
COMMON MODE REJECTION RATIO
CMRR
95 102
dB
-20 log│∆VGS1-2/∆VDS│
CONDITIONS
VDS = 10V, ID = 1mA
VDS = 10V, VGS = 0V
VDS = 10V to 20V, ID = 200µA
SYMBOL
en
CHARACTERISTIC
Noise Voltage
en
CISS
CRSS
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
MIN TYP MAX UNITS CONDITIONS
1.8
2.0
nV/√Hz
VDS = 15V, ID = 2.0mA, f = 1kHz,
NBW = 1Hz
2.8
3.5
nV/√Hz
VDS = 15V, ID = 2.0mA, f = 10Hz,
NBW = 1Hz
4
8
pF
VDS = 15V, ID = 500µA, f = 1MHz
3
pF
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVGSS
Gate to Source Breakdown Voltage
-60
V(BR)G1 - G2 Gate to Gate Breakdown Voltage
±30 ±45
VGS(OFF) Gate to Source Pinch-off Voltage
-1.5
-3.5
VGS
IDSS2
Gate to Source Operating Voltage
Drain to Source Saturation Current
-0.5
-3.5
2.5 5 15
IG
Gate Operating Current
-2 -25
-0.8 -10
IGSS
Gate to Source Leakage Current
-100
Gfs
Full Conductance Transconductance 1500
Gfs
Transconductance
1000 1500
GOS
Full Output Conductance
40
GOS
Output Conductance
1.8 2.7
UNITS
V
V
V
V
mA
pA
nA
pA
µS
µS
µS
µS
NF
Noise Figure
0.5 dB
CONDITIONS
VDS = 0, ID = -1nA
IG= ±1µA, ID=IS=0 A (Open Circuit)
VDS = 15V, ID = 1nA
VDS = 15V, ID = 500µA
VDG = 15V, VGS = 0
VDG = 15V, ID = 200µA
TA = 125°C
VDG = -15V, VDS = 0
VDG = 15V, VGS = 0, f = 1kHz
VDG = 15V, ID = 500µA
VDG = 15V, VGS = 0
VDG = 15V, ID = 200µA
VDS = 15V, VGS = 0, RG = 10MΩ,
f = 100Hz, NBW = 6Hz
Linear Integrated Systems
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Doc 201151 05/14/2014 Rev#A30 ECN# LSK489