LSK489 Datasheet, PDF (1/6 Pages) Linear Integrated Systems – LOW NOISE LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

LSK489
LOW NOISE LOW CAPACITANCE
MONOLITHIC DUAL
N-CHANNEL JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
LOW INPUT CAPACITANCE
en = 1.8nV/√Hz
Ciss = 4pF
Features
 Reduced Noise due
to process improvement
 Monolithic Design
 High slew rate
 Low offset/drift voltage
 Low gate leakage lgss & lg
 High CMRR 102 dB
Benefits
 Tight differential voltage match vs.
current
 Improved op amp speed settling time
accuracy
 Minimum Input Error trimming error
voltage
 Lower intermodulation distortion
Applications
 Wide band differential Amps
 High speed temperature
compensated single ended input
amplifier amps
 High speed comparators
 Impedance Converters
Description
The LSK 489 series of high performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift
over temperature specifications, and is targeted for use in a wide range or precision instrumentation applications. This series has
a wide selection of offset and drift specifications. The SST series SO-8 package provided ease of manufacturing and the
symmetrical pinout prevents improper orientation. The SO-8 package is available with tape and reel options for compatibility with
automatic assembly methods. (See packaging data)
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation, TA = 25°C
Continuous Power Dissipation, per side ⁴
Power Dissipation, total ⁵
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
-55 to +150°C
-55 to +150°C
300mW
500mW
IG(F) = 10mA
VGSO = 60V
VGDO = 60V
TO-71
TOP VIEW
SOIC-A
SOT-23
TOP VIEW
•
Linear Integrated Systems
* For equivalent single version, see LSK189
• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]
Doc 201151 05/14/2014 Rev#A30 ECN# LSK489