J111 Datasheet, PDF (2/2 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
J/SST111 J/SST112 J/SST113
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
g_fs Forward Transconductance
6
g_os Output Conductance
25
mS _{VDS = 20V, ID = 1mA}
µS ^{f = 1kHz}
r_ds(on) Drain to Source On Resistance
30
50
100
Ω
V_GS = 0V, I_D = 0mA
f = 1kHz
C_iss Input Capacitance
7
C_rss Reverse Transfer Capacitance
3
12
5
12
5
12
5
pF
V_DS = 0V, V_GS = -10V
f = 1MHz
e_n Equivalent Noise Voltage
3
nV/√Hz
V_DG = 10V, I_D = 1mA
f = 1 kHz
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT
t_d(on)
t_r
t_d(off)
t_f
Turn On Time
Turn Off Time
2
2
ns
6
15
CONDITIONS
V_DD = 10V
V_GS(H) = 0V
SWITCHING CIRCUIT CHARACTERISTICS
SYM. J/SST111 J/SST112 J/SST113
V_GS(L)
R_L
I_D(on)
-12V
800Ω
12mA
-7V
1600Ω
6mA
-5V
3200Ω
3mA
TO-92
SOT-23
0.175
0.195
0.170
LS XXX
0.195
YYWW
0.130
0.155
0.045
0.060
0.89
1.03
1
1.78
2.05
0.37
0.51
3
2.80
3.04
2
0.500
0.610
0.016
0.022
0.014
0.020
1
2
3
0.095
0.105
0.045
0.055
DIMENSIONS
IN INCHES.
1.20
1.40
0.89
2.10
1.12
2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
SWITCHING TEST CIRCUIT
V_DD
V_GS(H)
V_GS(L)
1kΩ
51Ω
R_L
OUT
51Ω
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
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