J111 Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
4ns
ABSOLUTE MAXIMUM RATINGS¹
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J)
360mW
Continuous Power Dissipation (SST)
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
Gate to Source
-35V
J/SST111 SERIES
SINGLE N-CHANNEL JFET
J SERIES
TO-92
BOTTOM VIEW
DSG
123
TO 92
SST SERIES
SOT-23
TOP VIEW
D1
S2
3_G
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
J/SST111 J/SST112 J/SST113
TYP
UNIT
MIN MAX MIN MAX MIN MAX
BV_GSS Gate to Source Breakdown Voltage
-35
-35
-35
V_GS(off) Gate to Source Cutoff Voltage
-3 -10 -1 -5
-3 V
V_GS(F) Gate to Source Forward Voltage
0.7
I_DSS Drain to Source Saturation Current²
20
5
2
mA
I_GSS Gate Leakage Current
-0.005
-1
-1
-1 nA
I_G Gate Operating Current
-5
pA
I_D(off) Drain Cutoff Current
0.005
1
1
1 nA
r_DS(on) Drain to Source On Resistance
30
50
100 Ω
CONDITIONS
I_G = -1µA, V_DS = 0V
V_DS = 5V, I_D = 1µA
I_G = 1mA, V_DS = 0V
V_DS = 15V, V_GS = 0V
V_GS = -15V, V_DS = 0V
V_DG = 15V, I_D = 10mA
V_DS = 5V, V_GS = -10V
I_G = 1mA, V_DS = 0V
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