3N190_14 Datasheet, PDF (2/2 Pages) Linear Integrated Systems – P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
gfs
Forward Transconductance⁴
gos
Output Admittance
1500
4000
µS
300
VDS = -15V, ID = -5mA, f = 1kHz
rds(on)
Drain to Source "On" Resistance
300
Ω
VDS = -20V, ID = -100µA
Crss
Reverse Transfer Capacitance
1.0
Ciss
Input Capacitance Output Shorted
4.5 pF VDS = -15V, ID = -5mA, f = 1MHz
Coss
Output Capacitance Input Shorted
3.0
SWITCHING CHARACTERISTICS
SYMBOL CHARACTERISTIC
td(on)
Turn On Delay Time
tr
Turn On Rise Time
toff
Turn Off Time
MIN TYP MAX UNITS CONDITIONS
15
30
ns
VDD = -15V, ID(on) = -5mA,
RG = RL = 1.4kΩ
50
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Per transistor.
3. Pulse: t = 300µs, Duty Cycle ≤ 3%
4. Measured at end points, TA and TB.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]
Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191