3N190_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

3N190 3N191
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
IGSS ≤ ±10pA
LOW TRANSFER CAPACITANCE
ABSOLUTE MAXIMUM RATINGS¹
Crss ≤ 1.0pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation @ TA=25ºC
Continuous Power Dissipation One Side
300mW
Continuous Power Dissipation Both Sides
525mW
Maximum Current
Drain to Source²
50mA
Maximum Voltages
Drain to Gate²
30V
Drain to Source²
30V
Gate to Gate
±80V
TO-78
TOP VIEW
case &
substrate
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
gfs1 gfs2
VGS1-2
ΔVGS1  2
ΔT
ΔVGS1  2
ΔT
Forward Transconductance Ratio
Gate to Source Threshold Voltage
Differential
Gate to Source Threshold Voltage
Differential with Temperature⁴
Gate to Source Threshold Voltage
Differential with Temperature⁴
0.85
1.0
VDS = -15V, ID = -500µA, f = 1kHz
100 mV VDS = -15V, ID = -500µA
100
μV C
VDS = -15V, ID = -500µA
TS = -55 to +25 °C
100
VDS = -15V, ID = -500µA
TS = +25 to +125 °C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
Drain to Source Breakdown Voltage
-40
ID = -10µA
BVSDS
Source to Drain Breakdown Voltage
-40
IS = -10µA, VBD = 0V
VGS
Gate to Source Voltage
-3.0
-6.5
V
VDS = -15V, ID = -500µA
-2.0
-5.0
VGS(th)
Gate to Source Threshold Voltage
-2.0
-5.0
VDS = VGS, ID = -10µA
VDS = -15V, ID = -500µA
IGSSR
Reverse Gate Leakage Current
10
VGS = 40V
IGSSF
IDSS
Forward Gate Leakage Current
Drain Leakage Current "Off"
-10
pA
-200
VGS = -40V
VDS = -15V
ISDS
ID(on)
Source to Drain Leakage Current "Off"
Drain Current "On"³
-5.0
-400
-30.0 mA
VSD = -15V, VDB = 0V
VDS = -15V, VGS = -10V
IG1G2
Gate to Gate Isolation Current
-
±1.0 µA VG1G2 = ±80V, ID = IS = 0 = mA
Linear Integrated Systems
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Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191