3N190-1 Datasheet, PDF (2/2 Pages) Linear Integrated Systems – P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (V_SB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
g_fs
Forward Transconductance⁵
Y_os
Output Admittance
1500
4000
µS
300
V_DS = -15V, I_D = -5mA, f = 1kHz
r_ds(on)
Drain to Source "On" Resistance
300
Ω
V_DS = -20V, I_D = -100µA
C_rss
Reverse Transfer Capacitance
C_iss
Input Capacitance Output Shorted
1.0
4.5 pF VDS = -15V, ID = -5mA, f = 1MHz
C_oss
Output Capacitance Input Shorted
3.0
SWITCHING CHARACTERISTICS
SYMBOL CHARACTERISTIC
t_d(on)
Turn On Delay Time
t_r
Turn On Rise Time
t_off
Turn Off Time
MIN TYP MAX UNITS CONDITIONS
15
30
ns
V_DD = -15V, I_D(on) = -5mA,
R_G = R_L = 1.4kΩ
50
TO-78
0.016
0.019
DIM. A
0.335
0.370
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
0.029
0.045
0.200
SEATING
PLANE
0.100
2 ³⁴
1
5
8 ₇₆
0.100
45°
0.028
0.034
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Per transistor.
3. Approximately doubles for every 10 °C increase in T_A.
4. Pulse: t = 300µs, Duty Cycle ≤ 3%
5. Measured at end points, T_A and T_B.
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