3N190-1 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

3N190 3N191
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
LOW TRANSFER CAPACITANCE
ABSOLUTE MAXIMUM RATINGS¹
I_GSS ≤ ±10pA
C_rss ≤ 1.0pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation One Side
300mW
Continuous Power Dissipation Both Sides
525mW
Maximum Current
Drain to Source²
50mA
Maximum Voltages
Drain to Gate²
Drain to Source²
Transient Gate to Source^2,3
30V
30V
±125V
Gate to Gate
±80V
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
TO-78
BOTTOM VIEW
C
4
G1 ³
5 _G2
S1 2
6 _S2
D1 ¹
7 _D2
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V_BS = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
g g fs1 fs2
V_GS1-2
Forward Transconductance Ratio
Gate to Source Threshold Voltage
Differential
0.85
1.0
V_DS = -15V, I_D = -500µA, f = 1kHz
100 mV V_DS = -15V, I_D = -500µA
∆VGS1 − 2
∆T
∆VGS1 − 2
∆T
Gate to Source Threshold Voltage
Differential with Temperature⁴
Gate to Source Threshold Voltage
Differential with Temperature⁴
100
µV °C
100
V_DS = -15V, I_D = -500µA
T_S = -55 TO +25 °C
V_DS = -15V, I_D = -500µA
T_S = +25 TO +125 °C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V_SB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BV_DSS
Drain to Source Breakdown Voltage
-40
BV_SDS
Source to Drain Breakdown Voltage
-40
I_D = -10µA
I_S = -10µA, V_BD = 0V
V_GS
Gate to Source Voltage
-3.0
-6.5
V
V_DS = -15V, I_D = -500µA
-2.0
-5.0
V_GS(th)
Gate to Source Threshold Voltage
-2.0
-5.0
V_DS = V_GS, I_D = -10µA
V_DS = -15V, I_D = -500µA
I_GSSR
Reverse Gate Leakage Current
10
V_GS = 40V
I_GSSF
I_DSS
Forward Gate Leakage Current
Drain Leakage Current "Off"
-10
pA
-200
V_GS = -40V
V_DS = -15V
I_SDS
Source to Drain Leakage Current "Off"
-400
V_SD = -15V, V_DB = 0V
I_D(on)
Drain Current "On"
-5.0
-30.0 mA V_DS = -15V, V_GS = -10V
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