JPAD Datasheet, PDF (1/2 Pages) Linear Integrated Systems – PICO AMPERE DIODES

Linear Integrated Systems
PAD SERIES
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS¹
BV_R ≥ -30V
C_rss ≤ 2.0pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (PAD)
300mW
Continuous Power Dissipation (J/SSTPAD)
350mW
Maximum Currents
Forward Current (PAD)
50mA
Forward Current (J/SSTPAD)
10mA
PAD1,2,5
TO-72
BOTTOM VIEW
2K
A 1 3C
JPAD
TO-92
BOTTOM VIEW
KA
12
PAD*
TO-72
BOTTOM VIEW
2 K*
A1
SSTPAD
SOT-23
TOP VIEW
K1
K2
3_A
* Cathode tied to Case
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
ALL PAD
-45
BV_R
Reverse Breakdown
Voltage
ALL SSTPAD
-30
V
ALL JPAD
-35
V_F
Forward Voltage
C_rss
Total Reverse Capacitance
PAD1,5
All Others
0.8 1.5
0.5 0.8
pF
1.5 2
CONDITIONS
I_R = -1µA
I_F = 5mA
V_R = -5V, f = 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
PAD²
JPAD²
SSTPAD²
(SST/J)PAD1
-1
(SST/J)PAD2
-2
(SST/J)PAD5
-5
-5
-5
(SST/J)PAD10
-10
-10
-10
I_R
Maximum Reverse
Leakage Current²
(SST/J)PAD20
-20
-20
-20
(SST/J)PAD50
-50
-50
-50
(SST/J)PAD100
-100
-100
(SST/J)PAD200
-200
(SST/J)PAD500
-500
UNITS
pA
CONDITIONS
V_R = -20V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]