ID100 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SCRs .5 Amp, Planar

Linear Integrated Systems
ID100 ID101
MONOLITHIC DUAL
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101
REVERSE LEAKAGE CURRENT
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS¹
I_R = 0.1pA
BV_R ≥ 30V
C_rss = 0.75pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Currents
Forward Current
20mA
Reverse Current
100µA
Maximum Voltages
Reverse Voltage
30V
Diode to Diode Voltage
±50V
ID100
TO-78
BOTTOM VIEW
ID101
TO-71
BOTTOM VIEW
NC ³
A1 2
K1 ¹
5 _NC
6 _A2
7 _K2
NC 3
A1 2
K1 1
5 NC
6 A2
7 _K2
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BV_R
Reverse Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Leakage Current
30
V
0.8
1.1
0.1
2.0 10 pA
|I_R1-I_R2|
C_rss
Differential Leakage Current
Total Reverse Capacitance²
3
0.75 1
pF
CONDITIONS
I_R = 1µA
I_F = 10mA
V_R = 1V
V_R = 10V
V_R = 10V, f = 1MHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]