DPAD Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL PICO AMPERE DIODES

Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX DPAD SERIES
HIGH ON ISOLATION
20fA
EXCELLENT CAPACITANCE MATCHING
ABSOLUTE MAXIMUM RATINGS¹
∆C_R ≤ 0.2pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (DPAD)
500mW
Maximum Currents
Forward Current (DPAD)
50mA
DPAD SERIES
MONOLITHIC DUAL
PICO AMPERE DIODES
DPAD
TO-72
BOTTOM VIEW
A1 3 5 A2
DPAD1
TO-78
BOTTOM VIEW
C
4
A1 3
5 K2
K1 1 7 K2
K1 1
7 A2
SSTDPAD
SOIC
K1 1
K1 2
A1 3
NC 4
8 K2
7 K2
6 A2
5 NC
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
DPAD1
-45
BV_R
Reverse Breakdown
Voltage
DPAD2,5,10,20,50,100 -45
V
SSTDPAD5,50,100 -30
V_F
|C_R1-C_R2|
Forward Voltage
Differential Capacitance
(∆C_R)
DPAD1
ALL OTHERS
0.8 1.5
0.2
0.5
DPAD1
0.8 pF
C_rss
Total Reverse Capacitance DPAD2,5,10,20,50,100
2.0
SSTDPAD5,50,100
4.0
CONDITIONS
I_R = -1µA
I_F = 1mA
V_R1 = V_R2 = -5V, f = 1MHz
V_R = -5V, f = 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
DPAD²
SSTDPAD²
(SST)DPAD1
-1
(SST)DPAD2
-2
(SST)DPAD5
-5
-5
I_R
Maximum Reverse
Leakage Current²
(SST)DPAD10
-10
(SST)DPAD20
-20
(SST)DPAD50
-50
-50
(SST)DPAD100
-100
-100
UNITS CONDITIONS
pA
V_R = -20V
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