3N163_14 Datasheet, PDF (1/2 Pages) Linear Integrated Systems – P-CHANNEL ENHANCEMENT MODE MOSFET

3N163, 3N164
P-CHANNEL
ENHANCEMENT MODE
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise stated)
Drain-Source or Drain-Gate Voltage
3N163
3N164
Drain Current
Storage Temperature
Power Dissipation TO-72 case
Power Dissipation SOT-143 case
-40V
-30V
50mA
-55ºC to +150ºC
375mW²
350mW³
SOT-143
TOP VIEW
TO-72
TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
3N163
3N164 UNITS
CONDITIONS
MIN MAX MIN MAX
IGSS
Gate Leakage Current
-10
-10 pA VGS=-40V, VDS=0 (3N163), VSB=0V
TA=+125ºC
-25
-25
VGS=-30V, VDS=0 (3N164), VSB=0V
BVDSS
Drain-Source Breakdown Voltage
-40
-30
ID=-10µA VGS=0, VBS=0
BVSDS
Source-Drain Breakdown Voltage
-40
-30
V IS=-10µA VGD=0, VBD=0
VGS(th)
Threshold Voltage
-2.0 -5.0 -2.0 -5.0
VDS=VGS ID=-10µA, VSB=0V
VGS
Gate Source Voltage (on)
-3.0 -6.5 -3.0 -6.5
VDS=-15V ID=-0.5mA, VSB=0V
IDSS
Zero Gate Voltage, Drain Current (off)
ISDS
Zero Gate Voltage, Source Current
-200
-400
-400 pA VDS=-15V VGS=0, VSB=0V
-800
VSD=-15V VGS=0, VDB=0V
RDS(on) Drain-Source on Resistance
250
300 ohms VGS=-20V ID=-100µA, VSB=0V
ID(on)
On Drain Current
-5.0 -30 -3.0 -30 mA VDS=-15V VGS=-10V, VSB=0V
gfs
Forward Transconductance
2.0 4.0 1.0 4.0 mS VDS=-15V ID=-10mA f=1kHz
gog
Output Admittance
Ciss
Input Capacitance-Output Shorted
250
250 µS
3.5
3.5 pF VDS=-15V ID=-10mA ¹ f=1MHz
Crss
Reverse Transfer Capacitance
0.7
0.7
Coss
Output Capacitance Input Shorted
3.0
3.0
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]
Doc 201137 09/02/2014 Rev#A8 ECN# 3N163 3N164