ISPLSI5384VE-125LB272 Datasheet, PDF (12/22 Pages) Lattice Semiconductor – In-System Programmable 3.3V SuperWIDE™ High Density PLD

Specifications ispLSI 5384VE
DC Electrical Characteristics for 2.5V Range¹
Over Recommended Operating Conditions
SYMBOL
PARAMETER
VCCIO ^{I/O Reference Voltage}
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
1. I/O voltage configuration must be set to VCCIO.
CONDITION
VCCIO=min, IOL= 100µA
VCCIO=min, IOL= 2mA
VCCIO=min, IOH= -100µA
VCCIO=min, IOH= -2mA
MIN.
2.3
-0.3
1.7
–
–
2.1
1.8
TYP.
–
–
–
–
–
–
–
MAX. UNITS
2.7
V
0.7
V
5.25 V
0.2
V
0.6
V
–
V
–
V
2.5V/5KVE
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
IIL
Input or I/O Low Leakage Current
IIH
Input or I/O High Leakage Current
CONDITION
0V ≤ V_IN≤ V_IL(Max.)
(VCCIO-0.2)V ≤ VIN ≤ VCCIO
IPU¹
IBHL
IBHH
IBHLO
IBHLH
IBHT
IVCCIO
I/O Active Pullup Current
Bus Hold Low Sustaining Current
Bus Hold High Sustaining Current
Bus Hold Low Overdrive Current
Bus Hold High Overdrive Current
Bus Hold Trip Points
Current Needed for V_CCIO Pin
VCCIO ≤ VIN ≤ 5.25V
0V ≤ VIN ≤ VIL
VIN = VIL(max)
VIN = VIH(min)
0V ≤ VIN ≤ VCCIO
0V ≤ VIN ≤ VCCIO
All I/Os Pulled-up, (Total I/Os * IPUmax)
1. Pullup is capable of pulling to a minimum voltage of V_OH under no-load conditions.
MIN.
–
–
–
–
40
-40
–
–
V_IL
–
TYP.
–
–
–
–
–
–
–
–
–
–
MAX. UNITS
-10 µA
10
µA
50
µA
-200 µA
–
µA
–
µA
550 µA
-550 µA
VIH
V
30 mA
DC Char_5KVE
12