L2SC4617QT1G_15 Datasheet, PDF (2/4 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

60
VCE=6V
50
LESHAN RADIO COMPANY, LTD.
L2SC4617QT1G Series,S-L2SC4617QT1G Series
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
1000
40
100
30
20
10
10
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
BASE TO EMITTER VOLTAGE: VBE(V)
-55℃
25℃
75℃
100℃
125℃
Fig.1 GROUNDED EMITTER PROPAGATION
CHARACTERISTICS
1000
VCE=5V
1
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
VCE=1V
VCE=3V
VCE=5V
Fig.2 DC CURRENT GAIN VS.COLLECTOR
CURRENT(1)
1
100
0.1
10
1
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
-55℃
25℃
75℃
100℃
125℃
Fig.3 DC CURRENT GAIN VS.COLLECTOR
CURRENT(2)
0.01
0.1
1
10
100
COLLECTOR CURRENT : IC (mA)
IC/IB=10
IC/IB=20
IC/IB=50
Fig.4 COLLECTOR-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
Rev.A 2/4