L2SC4617QT1G_15 Datasheet, PDF (1/4 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
! Ordering information
Device
L2SC4617QT1G
L2SC4617QT3G
L2SC4617RT1G
Marking
BQ
BQ
BR
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
L2SC4617RT3G
BR
L2SC4617ST1G
BS
L2SC4617ST3G
BS
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total device dissipation,T_A= 25°C
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
R _{θ JA}
Tj
Tstg
Limits
60
50
7
0.15
0.15
1.2
833
150
−55~+150
Unit
V
V
V
A
W
mW/°C
°C/W
˚C
˚C
L2SC4617QT1G Series
S-L2SC4617QT1G Series
SC-89
COLLECTOR
3
1
BASE
2
EMITTER
!^{Electrical characteristics (Ta=25}°^C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 7
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
!hFE values are classified as follows:
Item
Q
R
S
hFE
120~270 180~390 270~560
Typ. Max.
−
−
−
−
−
−
− 0.1
− 0.1
− 0.5
− 560
180 −
2.0 3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1 mA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
Rev.A 1/4