SUF2001 Datasheet, PDF (3/13 Pages) AUK corp – Dual N and P-channel Trench MOSFET

P-channel MOSFET Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ^⑧
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time ^⑦⑧
Rise time ^⑦⑧
Turn-off delay time ^⑦⑧
Fall time ^⑦⑧
Total gate charge ^⑦⑧
Gate-source charge ^⑦⑧
Gate-drain charge ^⑦⑧
Symbol
Test Condition
BV_DSS
V_GS(th)
I_DSS
I_GSS
R_DS(ON)
g_fs
Ciss
Coss
Crss
I_D=250A, V_GS=0
I_D=250A, V_DS=V_GS
V_DS=-30V, V_GS=0V
V_DS=0V, V_GS=20V
V_GS=-10V, I_D=-2.7A
V_GS=-5.0V, I_D=-2.7A
V_DS=-5V, I_D=-5.3A
V_GS=0V, V_DD=-10V,
f=1MHz
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_DS=-15V, I_D=-5.3A
R_G=10Ω
V_DS=-15V, V_GS=-5V
I_D=-5.3A
SUF2001
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
V
-
-3.0 V
-
1
A
-
100 nA
66
72 m
77
83 m
11
-
S
390 590
97 150 pF
37
60
1.2
-
1.1
-
ns
2.5
-
1.1
-
4.7 7.0
1.4 2.1 nC
1.7 2.5
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current (Pulsed) ^⑤
Forward voltage ^⑧
Reverse recovery time
Reverse recovery charge
Symbol
Test Condition
I_S
Integral reverse diode
I_SM
in the MOSFET
V_SD
V_GS=0V, I_S=-1.5A
t_rr
I_s=-1.5A
Q_rr
di_S/dt=100A/us
Min Typ Max Unit
-
-
-1.5
A
-
-
-6.0
-
-
-1.2
V
-
90
-
ns
-
0.5
-
uC
Note ;
⑤ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
⑥ L=2.0mH, I_AS=-5.0A, V_DD=-15V, R_G=25Ω
⑦ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
⑧ Essentially independent of operating temperature
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
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