SUF2001 Datasheet, PDF (2/13 Pages) AUK corp – Dual N and P-channel Trench MOSFET

N-channel MOSFET Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ^④
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time ^③④
Rise time ^③④
Turn-off delay time ^③④
Fall time ^③④
Total gate charge ^③④
Gate-source charge ^③④
Gate-drain charge ^③④
Symbol
BV_DSS
V_GS(th)
I_DSS
I_GSS
R_DS(ON)
g_fs
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Test Condition
I_D=250A, V_GS=0
I_D=250A, V_DS= V_GS
V_DS=30V, V_GS=0V
V_DS=0V, V_GS=20V
V_GS=10V, I_D=2.9A
V_GS=5.0V, I_D=2.9A
V_DS=5V, I_D=5.8A
V_GS=0V, V_DS=10V,
f=1MHz
V_DS=15V, I_D=5.8A
R_G=10Ω
V_DS=15V, V_GS=5V
I_D=5.8A
SUF2001
Min.
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
28
12
370
60
36
1.2
1.1
2.5
1.1
4.2
0.9
1.4
Max. Unit
-
V
3.0
V
1
A
100 nA
30 m
34 m
-
S
560
90
pF
54
-
-
ns
-
-
6.3
1.4 nC
2.1
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current(Pulsed) ^①
Forward voltage ^④
Reverse recovery time
Reverse recovery charge
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Test Condition
Integral reverse diode
in the MOSFET
V_GS=0V, I_S=1.5A
I_s=1.5A, di_S/dt=100A/us
Note ;
① Repetitive Rating : Pulse width limited by maximum junction temperature
② L=3.4mH, I_AS=5.8A, V_DD=15V, R_G=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
④ Essentially independent of operating temperature
Min Typ Max Unit
-
-
1.5
A
-
-
6.0
-
-
1.2
V
-
90
-
ns
-
0.5
-
uC
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
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