SGTN15C120HW Datasheet, PDF (3/5 Pages) KODENSHI KOREA CORP. – lnsulated Gate Bipolar Transistor

SGTN15C120HW
Anti-Parallel Diode Characteristics and Maximum Ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Forward on voltage
Reverse recovery time ^(4),(5)
Reverse recovery charge ^(4),(5)
V_F
V_GE=0V, I_F=15A
t_rr
I_F=10A, V_GE=0V, V_R=800V
Q_rr
dI_F/dt=750A/us
-
-
2.9
V
-
150
-
ns
-
1.2
-
uC
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R_th(j-c)
R_th(j-a)
Rating
Max. 0.6
Max. 40
Unit
C/W
Rev. date: 28-NOV-13
Preliminary
www.auk.co.kr
3 of 5