SGTN15C120HW Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – lnsulated Gate Bipolar Transistor

SGTN15C120HW
Insulated Gate Bipolar Transistor, IGBT
1200V, 15A High Speed Field Stop IGBT
Features
 Low gate charge
 Field Sotp Technology
 Low saturation voltage:
V_CE(sat) = 1.8V (@ I_C = 15A, T_C = 25C)
 RoHS compliant product
Applications
 General purpose inverters
 Induction heating (IH)
 UPS
Ordering Information
GCE
TO-247
Part Number
Marking
SGTN15C120HW N15C120H
Package
TO-247
AUK
△YMDD
N15C120H
Column 1: Manufacturer
Column 2: Production Information
e.g.) △YMDD
-. △: Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
Column 3: Device Code
Absolute Maximum Ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Collector-emitter voltage
Continuous collector current ⁽¹⁾
Pulsed collector current ⁽²⁾
Gate-emitter voltage
Turn-off safe area
Power dissipation
Operating and storage temperature range
Maximum lead temperature for soldering purpose
V_CES
I_C
T_c=25C
T_c=100C
I_CM
V_GES
-
P_D
T_J, T_stg
T_L
1) _{Collector current limited by maximum junction temperature}
2) _{Pulse width limited by maximum junction temperature and turn-off within RBSOA.}
Rating
1200
30
15
45
20
45
150
-55 to 150
300
Unit
V
A
A
A
V
A
W
C
C
Rev. date: 28-NOV-13
Preliminary
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