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V Datasheet, PDF (2/8 Pages) Continental Device India Limited – SOT-23 Formed SMD Package
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SNN5010D
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0
Gate threshold voltage
VGS(th) ID=250uA, VDS=VGS
Drain-source cut-off current
Gate leakage current
IDSS
IGSS
VDS=100V, VGS=0V
VDS=80V, VGS=0V,
TJ=125℃
VDS=0V, VGS=±20V
Drain-source on-resistance
RDS(ON)
VGS=10V, ID=25A
VGS=4.8V, ID=1A
Forward transfer conductance ④
gfs
VDS=40V, ID=25A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=50V, ID=50A
RG=25Ω
③④
Fall time
tf
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
VDD=80V, VGS=10V
ID=50A
Qgd
③④
Min.
100
1.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2.5
-
Max.
-
3.4
1
-
100
-
21
130
30
2100
640
130
25
250
110
140
75
13
36
±100
26
200
-
2310
704
143
-
-
-
-
83
15
40
Unit
V
V
uA
nA
mΩ
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current
Source current (Pulsed)
Forward voltage
IS
Integral reverse diode
①
ISM
in the MOSFET
④
VSD
VGS=0V, IS=50A
-
-
50
-
-
150
-
-
1.5
Reverse recovery time
Reverse recovery charge
trr
IS=50A, VGS=0V
Qrr
dIF/dt=100A/us
-
100
-
-
380
-
Unit
A
V
ns
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=0.5mH, IAS=25A, VDD=10V, RG=25Ω , Starting TJ=25℃
③ Pulse Test : Pulse Width≤ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T6O016-001
2
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