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V Datasheet, PDF (1/8 Pages) Continental Device India Limited – SOT-23 Formed SMD Package
SNN5010D
Advanced N-Ch Power MOSFET
DC/DC CONVERTER APPLICATIONS
Features
PIN Connection
• High Voltage : BVDSS=100V(Min.)
• Low Crss : Crss=130pF(Typ.)
• Low gate charge : Qg=75nC(Typ.)
• Low RDS(ON) : RDS(ON)=26mΩ(Max.)
D
D
Ordering Information
Type No.
Marking
SNN5010D
SNN5010
Package Code
TO-252
GS
G
S
TO-252
Marking Diagram
SNN
5010
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
VGSS
ID
(TC=25℃)
(TC=100℃)
IDM
Power dissipation
PD
Avalanche current (Single)
②
IAS
Single pulsed avalanche energy ②
EAS
Avalanche current (Repetitive)
①
IAR
Repetitive avalanche energy
①
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
100
±20
50
31
150
65
25
173
50
6.5
150
-55~150
Characteristic
Thermal
resistance*
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
1.92
62.5
KSD-T6O016-001
Unit
V
V
A
A
W
A
mJ
A
mJ
°C
Unit
℃/W
1